p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

摘要

The normally off operation of AlGaN/GaN heterojunction field effect transistor (HFET) devices with a p-type InGaN cap layer under a gate electrode was demonstrated. The threshold gate voltage V_(Gth) was 0.5 V, and the maximum transconductance g_m was abo