Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal-Oxide-Semiconductor Transistors

Hsin-Hui Hu; Kun-Ming CHEN; Guo-Wei HUANG; Alex CHIEN; Eric CHENG; Yu-Chi Yang; Chun-Yen Chang

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Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal-Oxide-Semiconductor Transistors

机译：温度对射频横向扩散金属氧化物半导体晶体管高频特性的影响分析

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摘要

In this work, the effects of temperature on the DC and RF characteristics of lateral-diffused metal-oxide-semiconductor (LDMOS) transistors were studied. Devices with different layout structures were fabricated using a 40 V LDMOS process. The temperature

机译：在这项工作中，研究了温度对横向扩散金属氧化物半导体（LDMOS）晶体管的DC和RF特性的影响。使用40 V LDMOS工艺制造具有不同布局结构的器件。温度

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来源
《Japanese journal of applied physics》 |2008年第4issue2期|2650-2655|共6页
作者
Hsin-Hui Hu; Kun-Ming CHEN; Guo-Wei HUANG; Alex CHIEN; Eric CHENG; Yu-Chi Yang; Chun-Yen Chang;
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正文语种 eng
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关键词
cutoff frequency; layout structure; LDMOS; maximum oscillation frequency; s-parameters; temperature;

机译：截止频率;布局结构;LDMOS;最大振荡频率s参数温度;

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1. Characterization of RF Lateral-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors with Different Layout Structures [J] . Hsin-Hui Hu, Kun-Ming Chen, Guo-Wei Huang, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第4B期

机译：具有不同布局结构的RF横向扩散金属氧化物半导体场效应晶体管的特性
2. Effects of high temperature forming gas anneal on the characteristics of metal-oxide-semiconductor field-effect transistor with HfO_(2) gate stack [J] . Rino Choi, Chang Seok Kang, Hag-Ju Cho, Applied Physics Letters . 2004,第24期

机译：高温气体退火对HfO_（2）栅叠层金属氧化物半导体场效应晶体管特性的影响
3. High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO_2 Layer [J] . Chun-Kai WANG, Shoou-Jinn CHANG, Yan-Kuin SU, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第4B期

机译：光化学气相沉积SiO_2层的AlGaN / GaN / AlGaN双异质结构金属氧化物半导体半结构场效应晶体管的高温性能和低频噪声特性
4. High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperatures [C] . Ono H., Taniguchi S., Suzuki T. Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on . 2004

机译：InAlAs / InGaAs变质高电子迁移率晶体管在高温下的高频特性和饱和电子速度
5. Effects of silicides and device structure on the characteristics and circuit performance of poly-silicon thin film transistors for active-matrix liquid-crystal displays. [D] . Sarcona, Greg Thomas. 1996

机译：硅化物和器件结构对有源矩阵液晶显示器用多晶硅薄膜晶体管的特性和电路性能的影响。
6. Mold–Slug Interfacial Heat Transfer Characteristics of Different Coating Thicknesses: Effects on Slug Temperature and Microstructure in Swirled Enthalpy Equilibration Device Process [O] . Min Luo, Daquan Li, Wenying Qu, 2019

机译：不同涂层厚度的模-耳界面传热特性：旋流焓平衡装置过程中对料温度和微观结构的影响
7. Erratum: “Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors” Appl. Phys. Lett. 106, 103109 (2015) [O] . Yao Guo, Xianlong Wei, Jiapei Shu, 2016

机译：错误：“在MOS2-SiO2接口处的电荷捕获及其对MOS2金属氧化物 - 半导体场效应晶体管的特性的影响”Appl。物理。吧。 106,103109（2015）
8. Experimental Observations of the Effects of Oxide Charge Inhomogeneity on Fast Surface State Density from High-Frequency MOS Capacitance-Voltage Characteristics. [R] . McNutt, M. J., Sah, C. T. 1974

机译：高频mOs电容 - 电压特性对氧化物电荷不均匀性对快速表面态密度影响的实验观察。

Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal-Oxide-Semiconductor Transistors

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