Comparison of Electrical, Optical, and Structural Propertiesrnof RF-Sputtered ZnO Thin Films Deposited Under Different Gas Ambients

摘要

Transparent conducting ZnO:Al thin films were prepared by rf-magnetron sputtering under different gas ambients at 300℃. The electrical resistivity varied from 1.23×10~(-1) to 2.8×10~(-4) Ω cm introducing O_2 and H_2 gas with Ar ambient. The minimum sheet