Crystalline Si Heterojunction Solar Cells with the Double Heterostructure of Hydrogenated Amorphous Silicon Oxide

摘要

Hydrogenated amorphous silicon oxide (a-SiO:H) layers have been applied to fabricate crystalline silicon (c-Si) heterojunction solar cells. The a-SiO:H/c-Si double heterostructure (DH) solar cell shows a notable increase in short-circuit current, compared with the single heterostructure solar cell, owing to suppression of carrier recombination at the solar-cell back surface. Nevertheless, the characteristics of the DH solar cells are found to deteriorate sharply with decreasing c-Si substrate thickness, and the solar cell efficiency decreases from 17.5% (300 μm) to 12.1% (54 μm). In this article, the effect of c-Si substrate thickness on the performance of DH solar cells is discussed.