Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model

摘要

This paper describes a methodology that enables the consistent simulation of electrothermal coupling using HiSIM_HV. HiSIM_HV is an extension of HiSIM, which is a surface-potential-based compact model, and it is expected that HiSIM_HV can realize stable and high speed circuit simulations. Evaluation of the HiSIM_HV model is performed on three aspects in this study. Firstly, the stability of the electrothermal coupling simulation on SPICE3 with long simulation time was evaluated. Next, a comparison of calculation speed between HiSIM_HV and MOS Level 3 on SPICE3 was performed. Finally, the calculation speed between HiSIM_HV on SPICE3 and the power metal oxide semiconductor field effect transistor (MOSFET) model on another simulator were compared. The results have verified that the methodology provides stable and fast simulation for real automotive applications with power devices where thermal interference occurs.