机译:Ge含量对应变SiGe p型金属氧化物半导体场效应晶体管闪烁噪声行为的影响
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.;
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;
Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan, R.O.C.;
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;
机译:Sin沉积条件对应变N沟道金属氧化物-半电子场效应晶体管的Flicker噪声特性的影响
机译:应变SiGe p沟道金属氧化物半导体场效应晶体管中增强冲击电离的研究
机译:利用随机电报噪声分析研究具有SiGe源极/漏极的高k /金属栅极p型金属氧化物半导体场效应晶体管的陷阱性质
机译:低温下高电子迁移率异质结构场效应晶体管的AlGaAs / GaAs闪变噪声
机译:小几何金属氧化物半导体(MOS)晶体管的噪声行为
机译:基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
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