首页> 外文期刊>Japanese journal of applied physics >Control of Powder Quality as a Method of Improving the Dielectric Properties of (Ba_0.6,Sr_0.4)TiO_3 Thick Films Fabricated by Aerosol Deposition Method
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Control of Powder Quality as a Method of Improving the Dielectric Properties of (Ba_0.6,Sr_0.4)TiO_3 Thick Films Fabricated by Aerosol Deposition Method

机译:粉末质量控制作为改善气溶胶沉积法制备(Ba_0.6,Sr_0.4)TiO_3厚膜介电性能的方法

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摘要

(Ba_(0.6),Sr_(0.4))TiO_3 (BST60) thick films were fabricated on Cu substrates by aerosol deposition (AD) method. The quality of the raw powder was checked and optimized to increase the dielectric constant of the fabricated films without the need of a post-film-formation annealing procedure. The carbonate phase has been observed in the raw powder and it was successfully reduced by thermally treating the powder at 900 ℃. The AD-fabricated films obtained from the 900 ℃ thermally-treated powder show a dielectric constant of 200, which is much higher than that of the AD-fabricated films obtained from the raw powders. The leakage currents in the films fabricated from 900℃ thermally-treated powders stay below 10~(-7) A/cm~2 when the applied electric field is less than 500 kV/cm, being at least one order of magnitude smaller than the leakage values in the AD-fabricated films obtained from the raw powder. The above results indicate that thermally treating the powder at 900 ℃ is a satisfactory method of improving the electrical properties of the AD-fabricated BST60 thick films.
机译:通过气溶胶沉积(AD)法在铜基板上制备了(Ba_(0.6),Sr_(0.4))TiO_3(BST60)厚膜。对原始粉末的质量进行了检查和优化,以提高制成膜的介电常数,而无需进行成膜后退火程序。在原料粉末中观察到碳酸盐相,并通过在900℃下热处理粉末成功地将其还原。用900℃热处理的粉末制成的AD制成的膜的介电常数为200,远远高于用原始粉末制成的AD制成的膜的介电常数。当施加的电场小于500 kV / cm时,由900℃热处理的粉末制成的薄膜的漏电流保持在10〜(-7)A / cm〜2以下,至少小于10〜(-7)A / cm〜2。由原始粉末获得的AD制造薄膜中的泄漏值。以上结果表明,在900℃下对粉末进行热处理是一种改善AD制造的BST60厚膜电性能的令人满意的方法。

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  • 来源
    《Japanese journal of applied physics》 |2010年第9issue2期|p.09MA013.1-09MA013.5|共5页
  • 作者

    Daniel Popovici; Jun Akedo;

  • 作者单位

    National Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan;

    rnNational Institute of Advanced Industrial Science and Technology, 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan;

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