GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO_2 Gate Insulator on AlGaN/GaN Heterostructure

摘要

GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with a tetraethylorthosilicate (TEOS) SiO_2 insulator were developed and evaluated using an AlGaN/GaN HFET structure as the source and drain regions. Operation up to a gate voltage of 10 V was realized at a low gate leakage current. A new method of measuring the mobility of a MOSFET was developed to prevent the effect of hysteresis, in which a relay was used to switch between current measurement and capacitance measurement at the same gate voltage. The maximum field-effect mobility is approximately 45 cm~2 V~(-1) s~(-1) at an interface state density of 1.02 × 10~(13) cm~(-2)eV~(-1).