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机译:通过原位掺杂硼的选择性硅外延制造的具有增加的源极和漏极扩展的平面金属氧化物半导体场效应晶体管
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
Device Technology Department, Semiconductor Technology Development Division, Semiconductor Business Group Consumer Products & Devices Group, Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan;
机译:原位砷和硼掺杂外延制备的新型金属镶嵌栅极金属氧化物半导体场效应晶体管
机译:ln_(0.7)Ga_(0.3)As N沟道金属氧化物半导体场效应晶体管的源极/漏极工程:带原位掺杂的高串联源极/漏极降低串联电阻
机译:低温分子束外延制造的超薄绝缘体上的Ge绝缘体金属源极/漏极P沟道金属氧化物半导体场效应晶体管
机译:通过原位掺杂选择性外延技术实现了SI(110)的凸出源/排水延长PFET
机译:将选择性硅外延与薄的侧壁隔离层集成在一起,用于亚微米级的高源/漏MOSFET。
机译:使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
机译:Si基旋转金属氧化物 - 半导体场效应晶体管的旋转传输:在倒置通道中的旋转漂移效果,在N + -SI源/漏区中的旋转松弛
机译:采用自对准硅化物技术制作的金属氧化物半导体场效应晶体管