机译:通过纳米级外延横向过度生长提高蓝宝石上基于InGaN的外延层的晶体质量
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Electronic Engineering, Faculty of Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan;
机译:通过横向外延生长和湿法化学刻蚀从蓝宝石衬底上生长和分离高质量GaN外延层
机译:纳米级横向外延过度生长改善蓝宝石上GaN层的微观结构和光学性能
机译:通过原位外延横向过生长提高m面蓝宝石上的半极性(1122)GaN的光学质量
机译:纳米图案化蓝宝石衬底上GaN晶体质量的改善
机译:蓝宝石上的氮化镓薄膜通过横向外延过生长来减少螺纹位错。
机译:R平面蓝宝石上外延横向过生长非极性a平面GaN的空间分辨和依赖于方向的拉曼映射
机译:两相生长方法通过外延横向过度生长改善深紫外激发发射的AlN晶体质量