Langasite Crystal Microbalance for Development of Reactive Surface Preparation of Silicon Carbide Film Deposition from Monomethylsilane Gas

摘要

A silicon carbide chemical vapor deposition (CVD) process at room temperature was developed using monomethylsilane (MMS) gas by an in situ measurement method using a langasite crystal microbalance (LCM). The phenomenon occurring on the LCM was evaluated by monitoring the frequency change during the processes and by comparing the frequencies in a steady state in ambient hydrogen without the use of any additional gases. The entire process was performed on the LCM, which could be used to evaluate the reactive surface preparation and the silicon carbide film deposition. To produce a reactive surface, a silicon-rich thin film was prepared by the CVD technique using MMS gas at 800 ℃. Because the LCM frequency continuously decreased along with the MMS gas supply at room temperature, the silicon carbide film deposition was found to be continuous for 1 min.