首页> 外文期刊>Japanese journal of applied physics >Near-Edge X-ray Absorption Fine-Structure Spectroscopic Study on Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition
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Near-Edge X-ray Absorption Fine-Structure Spectroscopic Study on Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition

机译:脉冲激光沉积制备的氮掺杂超纳米晶金刚石/氢化非晶碳复合膜的近边缘X射线吸收精细结构光谱研究

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摘要

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films, which possessed n-type conduction with enhanced electrical conductivity, were prepared by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at. % possessed enhanced electrical conductivity of 18Ω~-1cm~-1 at 300 K. The near-edge X-ray absorption fine-structure (NEXAFS) measurement indicated the appearance of additional peaks due to π* C=N, σ* C=N, and σ* C-N bonds compared with the spectra of undoped films. The sp~2 bonding fraction estimated from the NEXAFS spectra increased with the nitrogen content. The enhanced electrical conductivity is probably due to the formation of additional π* and σ* states and the enhancement in the sp~2 bonding fraction.
机译:通过脉冲激光沉积制备了氮型超纳米晶金刚石(UNCD)/氢化非晶碳(a-C:H)复合薄膜,该薄膜具有n型导电性和增强的导电性。该膜掺杂了7.9at。%的氮。 %在300 K时具有18Ω〜-1cm〜-1的增强电导率。近边缘X射线吸收精细结构(NEXAFS)测量表明,由于π* C = N,σ* C = N和σ* CN键与未掺杂膜的光谱相比。由NEXAFS光谱估计的sp〜2键合分数随氮含量的增加而增加。增强的电导率可能是由于形成了额外的π*和σ*状态以及sp〜2键合分数的提高。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue2期|p.08JD05.1-08JD05.4|共4页
  • 作者单位

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

    Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan;

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