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机译:硒化二硒硒化Cu(ln,Ga)Se_2薄膜的形貌和结构变化
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;
Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan;
CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;
机译:硒化硒化法制备Cu(In,Ga)Se_2薄膜的生长条件和结构性能
机译:硒化二硒硒化制备Cu(ln,AI)Se_2薄膜
机译:硒化硒化法制备的Cu(In,Ga)Se_2薄膜中晶粒的控制
机译:通过用单铜(In,Ga)Se_2和Cu-Ga-In_2Se_3靶溅射沉积Cu(族,Ga)Se_2膜和随后的硒化程序
机译:通过金属有机化学气相沉积相选择合成Tl-Ba-Ca-Cu-O薄膜和多层结构。工艺优化,相变,电学表征和微结构发展。
机译:Cu(In1-xGax)Se2薄膜太阳能电池一步硒化过程的综合研究
机译:Cu0.8Ga0.2和In2Se3precursor薄膜硒化Cu(In,Ga)Se2Thin膜的制备与表征