2.4-10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor

摘要

A wide-frequency-range low-phase-noise voltage controlled oscillator (VCO) with subharmonic injection locking is proposed and an implementation in 90 nm complementary metal oxide semiconductor (CMOS) is demonstrated. The result is a combination of the scalability and wide frequency tuning range naturally expected of a ring VCO and phase-noise performance close to that of an LC VCO using injection locking. The fabricated circuit is only 0.00054 mm~2 in area, and its frequency tuning range is from 2.4 to 10 GHz. For a 500 MHz input reference signal and a 9.0 GHz (= 18×500 MHz) output frequency, the 1-MHz-offset phase noise was -125dBc/Hz. This is a 54dB improvement over the free-running VCO phase noise of-71 dBc/Hz. The power consumption at 9.0 GHz is 9.5 mW.