Effects of Interface Nitride Layer on Electrical Characteristics of SiO-2/Nitride/SiC Metal-Insulator-Semiconductor Diode

摘要

A nitride layer was formed on a SiC surface by direct nitridation in NH-3 or N-2. The surface was characterized by X-ray photoelectron spectroscopy (XPS). The thickness of the nitride layer was estimated to be less than 2nm. The metal-insulator-semiconductor (MIS) Schottky diode was formed on SiC using the nitride layer as the interface layer to estimate the interface state density between the nitride layer and the SiC substrate from the diode factor n. The interface state density was on the order of 10~11-10~12 eV~-1 cm~-2 at 0.3 eV below the conduction band edge. A SiO-2 film was deposited on the nitridation layer to form an MIS diode. The interface state density of the SiO-2itride/SiC sample was lower than that of the MIS Schottoky diode.