NITRIDE-BASED LIGHT EMITTING DIODE AND A METHOD FOR MANUFACTURING THE SAME, CAPABLE OF IMPROVING THE OPTICAL CHARACTERISTIC OF THE DEVICE BY MINIMIZING THE DEFECT DENSITY IN A NITRIDE-BASED SEMICONDUCTOR LAYER

摘要

PURPOSE: A nitride-based light emitting diode and a method for manufacturing the same are provided to prevent the defect of a first buffer layer from expanding to a second buffer layer by interposing a metal layer for curing the defect between the first buffer layer and the second buffer layer.;CONSTITUTION: A substrate(101) is prepared. A first buffer layer(102) is formed on the substrate. A metal layer for curing a defect is formed on the first buffer layer. The metal layer is transferred to a position in which the defect(102a) exists on the first buffer layer by a fusing process. A second buffer layer is formed on the entire of the first buffer layer.;COPYRIGHT KIPO 2010