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首页> 外文期刊>Japanese journal of applied physics >Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer
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Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer

机译：通过插入1,1'-双（di-4-tolylaminophenyl）环己烷空穴传输缓冲层来提高并五苯有机薄膜晶体管的性能

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摘要

Organic thin film transistors (OTFTs) were fabricated by inserting various thickness of 1,1'-bis(di-4-tolylaminophenyl) cyclohexane (TAPC) hole transport layer (HTL) between pentacene and source/drain electrodes. Compared to the OTFTs without a HTL, these devices with optimum thickness TAPC HTL not only showed a decrease of threshold voltage (V_T) but also presented an enhancement of charge carrier mobility. The performance enhancement of OTFTs was ascribed to an increase of bulk hole transport properties in continuous film of HTL, which was analyzed by the variation trend of total resistance and contact resistance at metal-organic interface.
机译：通过在并五苯与源/漏电极之间插入各种厚度的1,1'-双（二-4-甲苯基氨基苯基）环己烷（TAPC）空穴传输层（HTL），来制造有机薄膜晶体管（OTFT）。与没有HTL的OTFT相比，具有最佳厚度TAPC HTL的这些器件不仅显示出阈值电压（V_T）降低，而且电荷载流子迁移率也有所提高。 OTFTs性能的提高归因于HTL连续膜中整体空穴传输性能的提高，这是通过金属-有机界面上总电阻和接触电阻的变化趋势来分析的。

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  • 来源
    《Japanese journal of applied physics》 |2011年第10issue1期|p.104101.1-104101.4|共4页
  • 作者

    Xinge Yu; Junsheng Yu; Jianlin Zhou; Han Wang; Luhua Cheng; Yadong Jiang;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China,Department of Electronic Engineering, College of Communication and Electronics, Chongqing University, Chongqing 400044, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information,University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China;

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