Mid Wavelength Type Ⅱ InAs/GaSb Superlattice Photodetector Using SiO_xN_y Passivation

摘要

We report on a mid wavelength (MW) type Ⅱ InAs/GaSb superlattice (SL) photodetector structure using SiO_xN_y as the passivation material. The 50% cutoff wavelength of the photoresponse is 4.8 nm at 77 K. R_0A, the resistance-and-area product at zero bias, is 2.1 × 10~3Ω·cm~2 for the device with the SiO_xN_y passivation, which is about 13 times larger than that without the passivation. Our result indicates SiO_xN_y passivation is an effective way to reduce the shunt current for MW InAs/GaSb SL photodetector.