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Study on Image Drift Induced by Charging during Observation by Scanning Electron Microscope

机译:扫描电子显微镜观察带电引起的图像漂移研究

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摘要

The mechanism of image drift in the observation of a boundary between a metal and an insulator by scanning electron microscope (SEM) is clarified by electron-trajectory simulation and experiment. In the region involving a straight boundary between a large-area metal layer and an insulating substrate, the largest image drift is expected to be observed owing to an asymmetric charging on the sample surface. The simulation result shows that a metal-insulator boundary in the SEM image shifts toward the metal part over several seconds, which is induced by a positively charged area outside of the irradiation region in the insulator part. This simulation result is confirmed to qualitatively coincide with the experimental one. In addition, we demonstrate that the direction and magnitude of the image drift can be controlled by changing the charging voltage of the insulating substrate by applying a bias voltage to the anode facing the sample surface.
机译:通过电子轨迹模拟和实验,阐明了通过扫描电子显微镜(SEM)观察金属和绝缘体之间的边界时图像漂移的机理。在大面积金属层与绝缘基板之间的直线边界的区域中,由于样品表面上的不对称带电,有望观察到最大的图像漂移。仿真结果表明,SEM图像中的金属-绝缘体边界在几秒钟内向金属部分移动,这是由绝缘体部分中照射区域外部的带正电的区域引起的。该模拟结果在质量上与实验结果相吻合。另外,我们证明了通过向面对样品表面的阳极施加偏置电压来改变绝缘基板的充电电压,可以控制图像漂移的方向和大小。

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  • 来源
    《Japanese journal of applied physics》 |2012年第6issue2期|p.06FB11.1-06FB11.7|共7页
  • 作者

    Nobuhiro Okai; Yasunari Sohda;

  • 作者单位

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

    Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan;

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  • 正文语种 eng
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