Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates

摘要

The epitaxy of graphene on 3C-SiC(111) formed on microfabricated Si(111) has been demonstrated. Through observations by optical microscopy, micro-Raman spectroscopy, low-energy electron diffraction, and photoelectron spectroscopy, it has been confirmed that the epitaxial graphene is Bernal-stacked with a buffer layer present between graphene and the 3C-SIC film, which can lead to the opening of the band gap necessary for logic operations. The quality of graphene is improved by the shrinkage of the pattern. These results indicate that graphene on silicon using the microfabricated substrate is a promising material for the realization of graphene-based devices.