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首页> 外文期刊>Japanese journal of applied physics >Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells
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Light Trapping by Ag Nanoparticles Chemically Assembled inside Thin-Film Hydrogenated Microcrystalline Si Solar Cells

机译:化学组装在薄膜氢化微晶硅太阳能电池内部的银纳米粒子的光阱

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摘要

A systematic study on the Ag nanoparticle (NP)-mediated light trapping in thin film hydrogenated microcrystalline Si (μc-Si:H) solar cells is described. In this study, a unique wet-chemical approach was applied to allow the assembly of light scattering Ag NPs inside the rear ZnO:Ga layer of μc-Si:H solar cells in a controlled manner. It was confirmed that both the surface coverage by the Ag NPs and the location of the Ag NPs in the ZnO:Ga layer have significant impacts on the final light trapping effect. By optimizing these two parameters, a 75% higher current density generated in the near-infrared range (700-1100 nm) was achieved in a Ag NP-incorporated cell compared with a cell without the Ag NP incorporation.
机译:描述了在薄膜氢化微晶硅(μc-Si:H)太阳能电池中Ag纳米粒子(NP)介导的光捕获的系统研究。在这项研究中,采用了一种独特的湿化学方法,以可控方式在μc-Si:H太阳能电池的背面ZnO:Ga层内部组装光散射Ag NP。可以确定的是,Ag NPs的表面覆盖率和ZnO:Ga层中Ag NPs的位置都对最终的光捕获效果有重大影响。通过优化这两个参数,与未掺有Ag NP的电池相比,掺有Ag NP的电池在近红外范围(700-1100 nm)中产生的电流密度提高了75%。

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  • 来源
    《Japanese journal of applied physics》 |2012年第4issue1期|p.042302.1-042302.5|共5页
  • 作者单位

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan;

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan;

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