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机译:利用厚缓冲层通过卤化物气相外延法改进在(0001)蓝宝石衬底上生长的(0001)ZnO层的光学性能
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83, Linkoeping, Sweden;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83, Linkoeping, Sweden;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Physics, Chemistry and Biology (IFM), Linkoeping University, S-581 83, Linkoeping, Sweden;
机译:卤化物气相外延在(0001)蓝宝石衬底上两步生长(0001)ZnO单晶层
机译:固态源卤化物气相外延在蓝宝石(0001)衬底上高温生长厚AlN层
机译:使用氢化物气相外延在蓝宝石(0001)衬底上生长厚AlN层
机译:GaN(0001)模板上的金属化学化学气相沉积种植的ZnO(0001)层的性质
机译:原子清洁的氮化镓(0001)和氮化铝(0001)薄膜的制备,表征以及通过碘汽相生长沉积厚的氮化镓薄膜。
机译:卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
机译:卤化物气相外延在基底平面蓝宝石基板上生长的薄α-GA2O3薄膜的电性能,结构性能和深阱光谱