机译:卤化物气相外延在(0001)蓝宝石衬底上两步生长(0001)ZnO单晶层
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan;
机译:利用厚缓冲层通过卤化物气相外延法改进在(0001)蓝宝石衬底上生长的(0001)ZnO层的光学性能
机译:固态源卤化物气相外延在蓝宝石(0001)衬底上高温生长厚AlN层
机译:使用氢化物气相外延在蓝宝石(0001)衬底上生长厚AlN层
机译:氢化物气相外延在(0001)蓝宝石衬底上生长GaN纳米棒
机译:通过有机金属气相外延在6H-碳化硅(0001)衬底上横向生长氮化镓薄膜的横向外延技术。
机译:卤化物气相外延在锥形截肢型蓝宝石衬底上生长的α-GA2O3癫痫脱位的减少
机译:NH3输入分压高对氮化(0001)蓝宝石衬底对InN的氢化物气相外延的影响