A Novel Coplanar-Waveguide Band-Pass Filter Utilizing the Inductor-Capacitor Structure in 0.18 μm Complementary Metal-Oxide-Semiconductor Technology for Millimeter-Wave Applications

摘要

A low-insertion-loss V-band complementary metal-oxide-semiconductor (CMOS) band-pass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (ω_(z1)) and the high-frequency transmission-zero (ω_(z2)) can be tuned individually by adjusting the value of the series capacitor (C_s) and the size of the built-in inductor-capacitor (LC) resonator, respectively. The folded short-stub technique is used to reduce the chip size of the filter. To reduce the silicon substrate loss, the CMOS-process-compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, the filter achieves insertion-loss (1/S_(21)) lower than 3dB over the frequency range of 46.5-85.5 GHz. The minimum insertion-loss is -1.8dB at 60GHz.