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机译:在线路层上的低k / Cu后端具有圆柱电容器的逻辑知识产权兼容嵌入式动态随机存取存储器的基本性能
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
Production and Technology Unit, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
LSI Research Laboratory, Renesas Electronics Corporation, Sagamihara 252-5298, Japan;
机译:通过嵌入低k电介质层改进电阻随机存取存储器件性能
机译:通过嵌入低介电常数介电层提高电阻式随机存取存储设备的性能
机译:通过嵌入低介电常数介电层提高电阻式随机存取存储设备的性能
机译:一种新颖的圆柱型MIM电容器,用于多孔低k膜(CAPL),用于具有先进CMOS逻辑的嵌入式DRAM
机译:铁电动电容器对铁电随机存取记忆性能增强的应力效应研究
机译:人工控制电阻迁移中的铜迁移通过在基于a-COx的导电桥随机访问存储器中使用优化的AlOx界面层来进行突触和葡萄糖/唾液检测
机译:利用灵活的顺序和随机存取存储器提高嵌入式系统的存储性能
机译:原子层沉积(aLD) - 沉积二氧化钛(TiO2)厚度对Zr40Cu35al15Ni10(ZCaN)/ TiO2 /铟(In)基电阻随机存取存储器(RRam)结构性能的影响。