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Size Dependence Effect in MgO-Based CoFeB Tunnel Junctions with Perpendicular Magnetic Anisotropy

机译:垂直磁各向异性的MgO基CoFeB隧道结的尺寸依赖性效应

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摘要

We examine the effect of junction sizes on the magnetization reversal process and spin-transfer torque switching of the MgO-based CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA). From the magnetic field transport measurements, it was found that the miniaturization of MTJs inherently enhances the switching asymmetry and the PMA of the soft layer. Our micromagnetic simulations confirmed that the dipolar field from the hard layer is responsible for the switching asymmetry and the increase in perpendicular shape anisotropy induces improvement of the PMA. It was further revealed that this additional anisotropy gained from the smaller MTJ sizes is not sufficient to sustain the thermal stability to meet the long-term information storage at the state-of-the-art complementary-metal-oxide semiconductor technology node. The pulsed spin-transfer torque measurements showed that a higher current density is needed to switch the magnetization of the soft layer in MTJ with smaller lateral dimensions, which is attributed to the increase in PMA.
机译:我们检查了结尺寸对具有垂直磁各向异性(PMA)的基于MgO的CoFeB磁性隧道结(MTJs)的磁化反转过程和自旋传递扭矩切换的影响。从磁场传输测量中发现,MTJ的小型化本质上增强了软层的开关不对称性和PMA。我们的微磁仿真证实,来自硬层的偶极场是开关不对称的原因,垂直形状各向异性的增加引起PMA的改善。进一步揭示出,从较小的MTJ尺寸获得的这种额外的各向异性不足以维持热稳定性,从而无法满足最新的互补金属氧化物半导体技术节点的长期信息存储需求。脉冲自旋转移扭矩测量结果表明,需要使用更高的电流密度来切换横向尺寸较小的MTJ中软层的磁化强度,这归因于PMA的增加。

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  • 来源
    《Japanese journal of applied physics》 |2012年第1issue1期|p.013101.1-013101.5|共5页
  • 作者单位

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

    Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608;

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