Physics of the Voltage Constant in Multilevel Switching of Conductive Bridge Resistive Memory

摘要

The multilevel switching of conductive bridge resistive memory is characterized by the ON-state resistance (Ron) being inversely proportional to the compliance current (I_(cc)). The constant of this relation is shown to be universally correlated to the minimum SET voltage (V_(SET(min))) for all conductive bridge devices. (V_(SET(min))), required to switch the memory from high resistance state to low resistance state, can be extracted using small voltage sweep rates. The correlation has been verified by experiments on Cu/TaO_x/Pt devices and confirmed for data on resistive devices reported in the literature. The physical domain of validity for the R_(On)-I_(cc) relation has been established.