Memory arrangement e.g. conductive bridging RAM, for storing information, has memory cells whose status is modified by applying voltage at two poles of cells, where poles of memory cells are short-circuited through switching arrangement

摘要

The arrangement has a set of memory cells (101) whose memory status can be modified by applying voltage at two poles of the memory cells. The two poles of the memory cells are short-circuited through a switching arrangement (130), where the memory cells are selectively manufactured. The memory cells are arranged like an array, and each of the two poles of the memory cells are provided with respective bit line and word line. An independent claim is also included for a method for protecting a memory arrangement.