GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets

摘要

GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current-voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.