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机译:双(苯并噻吩并)萘多晶薄膜制备的10cm〜2 V〜(-1)s〜(-1)以上的高迁移率有机薄膜晶体管
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
Advanced Technology Research Laboratories, Idemitsu Kosan Co., Ltd., Sodegaura, Chiba 299-0293, Japan;
机译:基于[1]苯并噻吩的不对称缀合分子[3,2-B] [1]苯并噻吩用于高迁移率有机薄膜晶体管:烷基链长度的影响
机译:在玻璃上高迁移率固相结晶Ge上制造的多晶薄膜晶体管
机译:直流磁控溅射法制备的具有多晶ln-Ga-0沟道的高迁移率薄膜晶体管
机译:基于萘-双(二甲叉酰亚胺)聚合物的有机薄膜晶体管,用于使用空穴受体层的n通道有机存储
机译:多晶Cu2O薄膜晶体管电气性能有限的起源
机译:具有固溶处理的金属氧化物半导体和介电膜的可穿戴式1 V工作薄膜晶体管通过低温深紫外光退火在低温下制成
机译:准分子激光退火制备的低温高迁移率InZnO薄膜晶体管