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机译:菱面体Pb(Zr,Ti)O_3薄膜的极化电场滞后曲线的垂直度控制
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
Tokyo Institute of Technology, Yokohama 226-8502, Japan;
机译:通过基板与Pb(Zr_(0.52)Ti_(0.48))O_3膜之间的热膨胀失配来控制应力的Pb(Zr_(0.52)Ti_(0.48))O_3厚膜
机译:(Pb_(0.90)La_(0.10))Ti_(0.975)O_3 / Pb(Zr_(0.20)Ti_(0.80))O_3双层薄膜的双磁滞回线
机译:(111)/(111)rhombohedral外延Pb(Zr_(0.65)Ti_(0.35))O_3薄膜:快速切换和放松的旋转电场
机译:PB的有效方向控制(Zr_(0.4)Ti_(0.6))O_3使用新型Ti / Pb的薄膜(Zr_(0.4)Ti_(0.6))O_3播种层
机译:压电瘤应用Pb(Zr0.3Ti0.7)O3薄膜对缩放效应对缩放效应的影响
机译:在高度c轴取向的Pb(Zr0.52Ti0.48)O3薄膜中具有超低应变滞后的大压电应变并且在非晶玻璃基板上呈柱状生长
机译:用于基于全氧化物$ LaNiO_3 / pb(Zr,Ti)O_3 / LaNiO_3薄膜的压电mEms器件的大面积脉冲激光沉积和组装工艺
机译:a-sITE-aND /或B-sITE-mODIFIED pBZRTIO3材料和(pB,sR,Ca,Ba,mG)(ZR,TI,NB,Ta)O3薄膜,具有铁电随机存取存储器和高性能薄膜微处理器的实用性