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首页> 外文期刊>Japanese journal of applied physics >Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition
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Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition

机译:通过光发射辅助等离子体增强化学气相沉积法形成类金刚石碳膜

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摘要

Diamond-like carbon (DLC) films, which are an amorphous carbonaceous allotrope composed of sp~2 carbon, sp~3 carbon, and hydrogen, were prepared by photoemission-assisted plasma-enhanced chemical vapor deposition (PA-PECVD). The electrical behavior during film growth monotonically depended on the methane source gas concentration. Raman analysis of the films suggests that a DLC film grown at a high methane concentration condition contains a small number of graphitic domains, decreasing amorphicity of the film. In contrast, at a low concentration, the methane molecules were transformed into sufficiently fragmented radicals, forming a lot of graphitic nuclei and increasing the amorphicity. However, the variations of the relative dielectric constant, breakdown strength, and optical bandgap exhibited extreme values at an intermediate methane concentration. Thus, the two growth modes give different DLC films with varying combinations of electrical and optical characteristics.
机译:通过光发射辅助等离子体增强化学气相沉积(PA-PECVD)制备了类金刚石碳(DLC)膜,该膜是由sp〜2碳,sp〜3碳和氢组成的无定形碳质同素异形体。膜生长期间的电行为单调取决于甲烷源气体的浓度。薄膜的拉曼分析表明,在高甲烷浓度条件下生长的DLC薄膜包含少量石墨域,从而降低了薄膜的非晶性。相反,在低浓度下,甲烷分子被转化为足够碎片的自由基,形成许多石墨核并增加了非晶性。但是,相对介电常数,击穿强度和光学带隙的变化在中等甲烷浓度下显示出极值。因此,两种生长模式提供具有不同电学和光学特性组合的不同DLC膜。

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  • 来源
    《Japanese journal of applied physics》 |2013年第11issue1期|110123.1-110123.11|共11页
  • 作者单位

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

    Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan;

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