机译:电流瞬变法分析陷阱及其对基于InGaN的蓝色发光二极管的影响
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE),Seoul National University, Seoul 151-742, Korea;
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE),Seoul National University, Seoul 151-742, Korea;
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE),Seoul National University, Seoul 151-742, Korea;
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE),Seoul National University, Seoul 151-742, Korea;
Samsung Electronics, Co., Ltd., Yongin, Gyeonggi 446-711, Korea;
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering (ECE),Seoul National University, Seoul 151-742, Korea;
机译:基于InGaN的蓝色发光二极管和激光二极管
机译:结构缺陷在基于InGaN的蓝色发光二极管和激光二极管中的作用
机译:基于InGaN的蓝色发光二极管和基于AIGalnP的红色发光二极管的电流和温度相关的效率下降
机译:通过阻抗分析研究了基于InGaN的发光二极管的辐射和非辐射载流子寿命
机译:载流子迁移率,电荷陷阱对重掺杂有机发光二极管和基于Europlum(lll)的红色OLED的效率产生影响。
机译:微观In波动对InxGa1-xN蓝色发光二极管的光学性能的影响通过同步加速器辐射的低能X射线荧光图评估
机译:GaN高电子迁移率晶体管陷阱分析的电流瞬态方法