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首页> 外文期刊>Japanese journal of applied physics >Exciplex-triplet energy transfer: A new method to achieve extremely efficient organic light-emitting diode with external quantum efficiency over 30% and drive voltage below 3V
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Exciplex-triplet energy transfer: A new method to achieve extremely efficient organic light-emitting diode with external quantum efficiency over 30% and drive voltage below 3V

机译:激态三重态能量转移:一种新的方法,可以实现效率极高的有机发光二极管,其外部量子效率超过30%,驱动电压低于3V

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摘要

A novel approach to enhance the power efficiency of an organic light-emitting diode (OLED) by employing energy transfer from an exciplex to a phosphorescent emitter is reported. It was found that excitation energy of an exciplex formed between an electron-transporting material with a π-deficient quinoxaline moiety and a hole-transporting material with aromatic amine structure can be effectively transferred to a phosphorescent iridium complex in an emission layer of a phosphorescent OLED. Moreover, such an exciplex formation increases quantum efficiency and reduces drive voltage. A highly efficient, low-voltage, and long-life OLED based on this energy transfer is also demonstrated. This OLED device exhibited extremely high external quantum efficiency of 31% even without any attempt to enhance light outcoupling and also achieved a low drive voltage of 2.8 V and a long lifetime of approximately 1,000,000 h at a luminance of 1,000 cd/m~2.
机译:报道了一种通过利用从激基复合物到磷光发射体的能量转移来提高有机发光二极管(OLED)的功率效率的新颖方法。发现在具有π缺陷的喹喔啉部分的电子传输材料和具有芳香族胺结构的空穴传输材料之间形成的激基复合物的激发能可以有效地转移至磷光OLED的发光层中的磷光铱络合物。 。而且,这种激基复合物的形成提高了量子效率并降低了驱动电压。还展示了基于这种能量转移的高效,低压,长寿命的OLED。该OLED器件即使没有进行任何增强光输出耦合的尝试,也表现出31%的极高外部量子效率,并且在1,000 cd / m〜2的亮度下也实现了2.8 V的低驱动电压和大约1,000,000 h的长寿命。

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  • 来源
    《Japanese journal of applied physics》 |2014年第4期|042102.1-042102.8|共8页
  • 作者单位

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

    Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa 243-0036, Japan;

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