...
首页> 外文期刊>Japanese journal of applied physics >Compact 0.3-to-1.125GHz self-biased phase-locked loop for system-on-chip clock generation in 0.18 mu m CMOS
【24h】

Compact 0.3-to-1.125GHz self-biased phase-locked loop for system-on-chip clock generation in 0.18 mu m CMOS

机译:紧凑的0.3至1.125GHz自偏置锁相环,可在0.18μmCMOS中生成片上系统时钟

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

In this paper, we propose a compact ring-oscillator-based self-biased phase-locked loop (SBPLL) for system-on-chip (SoC) clock generation. It adopts the proposed triple-well NMOS source degeneration voltage-to-current (V-I) converter instead of the operational amplifier (OPAMP) based V-I converter and a proposed simple start-up circuit with a negligible area to save power and area. The SBPLL is implemented in the 0.18 mu m CMOS process, and it occupies 0.048 mm(2) active core. The measurement results show the SBPLL can generate output frequency in a wide range from 300 MHz to 1.125 GHz with a constant loop bandwidth that is around 5MHz and a relatively low jitter performance that is less than 4.9 mUI over the entire covered frequency range. From -20 to 70 degrees C the rms jitter variation and loop bandwidth variation at 1.125 GHz are 0.2 ps and 350 kHz, respectively. The rms jitter performance variation of all covered frequency points is less than 10% in the supply range from 1.5 to 1.7 V. Such SBPLL shows robustness over environmental variation. The maximum power consumption is 5.6 mW with 1.6V supply at an output frequency of 1.125 GHz. (C) 2016 The Japan Society of Applied Physics
机译:在本文中,我们提出了一个紧凑的基于环形振荡器的自偏置锁相环(SBPLL),用于片上系统(SoC)时钟生成。它采用建议的三阱NMOS源极退化电压电流(V-I)转换器代替基于运算放大器(OPAMP)的V-I转换器,并采用建议的简单启动电路,其面积可忽略不计,以节省功耗和面积。 SBPLL是在0.18微米CMOS工艺中实现的,它占用0.048 mm(2)的有源内核。测量结果表明,SBPLL可以在300 MHz至1.125 GHz的宽范围内产生输出频率,其恒定环路带宽约为5MHz,并且在整个覆盖的频率范围内具有较低的抖动性能,低于4.9 mUI。从-20到70摄氏度,在1.125 GHz时,均方根抖动变化和环路带宽变化分别为0.2 ps和350 kHz。在1.5至1.7 V的电源范围内,所有涵盖频率点的均方根抖动性能变化均小于10%。此类SBPLL在环境变化方面表现出鲁棒性。在1.125 GHz的输出频率下使用1.6V电源供电时,最大功耗为5.6 mW。 (C)2016年日本应用物理学会

著录项

  • 来源
    《Japanese journal of applied physics》 |2016年第4s期|04EF05.1-04EF05.7|共7页
  • 作者单位

    Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;

    Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号