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机译:在具有溅射AIN成核层的不同尺寸的蓝宝石衬底上生长的GaN基紫外LED的比较研究
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Wuhan Univ, Sch Power & Mech Engn, Hubei Key Lab Waterjet Theory & New Technol, Wuhan 430072, Hubei, Peoples R China|Wuhan Univ, Inst Technol Sci, Res Ctr Elect Mfg & Packaging Integrat, Wuhan 430072, Hubei, Peoples R China;
Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA;
机译:在深紫外LED应用的纳米图案蓝宝石衬底上生长的基于AIN的材料的研究
机译:深紫外LED应用中纳米图形底板上生长的Ain基材料的研究
机译:在具有高纵横比的溅射蓝宝石成核蓝宝石衬底上制备的GaN基发光二极管中,效率与晶体结构之间的空间相关性
机译:在具有AIN和GaN成核层的蓝宝石衬底上生长和制造的AlGaN / GaN HEMT的比较
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
机译:蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
机译:在(00-1)蓝宝石,(100)和(111)硅衬底上生长的高质量aIN和GaN外延层