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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

机译：蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高

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Chia-Yu Lee; An-Jye Tzou; Bing-Cheng Lin; Yu-Pin Lan; Ching-Hsueh Chiu; Gou-Chung Chi; Chi-Hsiang Chen; Hao-Chung Kuo; Ray-Ming Lin; Chun-Yen Chang;
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1. Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer [J] . Chang L., Chen Y., Kuo C. Electron Devices, IEEE Transactions on . 2014,第7期

机译：在具有高纵横比的溅射蓝宝石成核蓝宝石衬底上制备的GaN基发光二极管中，效率与晶体结构之间的空间相关性
2. Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate [J] . Liu Wen-Jie, Hu Xiao-Long, Liu Yi-Jun Journal of materials science . 2019,第3期

机译：蓝宝石衬底上具有两步绝缘层方案的GaN基近紫外倒装芯片发光二极管的性能增强
3. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency [J] . Peng Dong, Jianchang Yan, Yun Zhang, Journal of Crystal Growth . 2014,第juna1期

机译：在纳米图案蓝宝石衬底上生长的基于AlGaN的深紫外发光二极管具有显着改善的内部量子效率
4. Enhanced internal-quantum efficiency of GaN-based light-emitting diodes with a larger post-duty cycle of patterned-sapphire substrates [C] . Vin-Cent Su, Po-Hsun Chen, Ta-Cheng Hsu, Conference on Lasers and Electro-Optics . 2017

机译：氮化镓基发光二极管的内部量子效率更高，且图案化蓝宝石衬底的占空比更大
5. Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy [D] . Chen, Kaixuan 2008

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
6. Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate [O] . Chia-Yu Lee, An-Jye Tzou, Bing-Cheng Lin, 2014

机译：蓝宝石衬底上具有反应性等离子体沉积AlN成核层的GaN基紫外发光二极管的效率提高
7. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes [O] . 2019

机译：具有纳米级厚的Aln成核层对基于Algan的深紫外发光二极管的纳米级厚的Aln成核膜的高质量和无裂缝Aln膜的异质生长

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

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