Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices

摘要

We investigated the potential of low-temperature pulsed sputtering deposition (PSD) for the fabrication of high-In-composition thick InGaN multiple quantum wells (MQWs). Low-temperature PSD growth allowed the growth of a 100-period 1.2-nm-thick In0.3Ga0.7N MQW on GaN bulk crystals without apparent lattice relaxation. We fabricated a nitride-based photovoltaic device using 100-period In0.3Ga0.7N MQW absorption layers and obtained a clear photovoltaic response with an open-circuit voltage of 1.24V, a short-circuit current density of 1.76mA center dot cm(-2), and a maximum output power density of 1.10mW center dot cm(-2) under 1 sun with air mass 1.5 illumination. (C) 2017 The Japan Society of Applied Physics