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Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device

机译：多面InGaN / GaN多量子阱发光器件的生长和电致发光性能

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We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.

机译：我们报告了在多面微棒上生长的InGaN / GaN多量子阱（MQW）的研究。多方面的MQW具有广泛的发射光谱。证明了电注入具有从红色到蓝色的发射颜色。

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《Conference on Lasers and Electro-Optics》|2015年|1-2|共2页
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Li Yun-Jing; Chang Shih-Pang; Cheng Yuh-Jen; Kuo Hao-Chung; Chang Chun-Yen;
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1. Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array [J] . Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Optics Letters . 2013,第17期

机译：InGaN / GaN量子阱纳米棒发光二极管阵列的规则图案生长的发光器件
2. Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array [J] . Horng-Shyang Chen, Yu-Feng Yao, Che-Hao Liao, Optics Letters . 2013,第17期

机译：InGaN / GaN量子阱纳米棒发光二极管阵列的规则图案生长的发光器件
3. M-plane core-shell InGaN/GaN multiple-quantum-wells on GaN wires for electroluminescent devices [J] . Koester R., Hwang J.-S., Salomon D., Nano letters . 2011,第11期

机译：用于电致发光器件的GaN线上的M平面核-壳InGaN / GaN多量子阱
4. Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device [C] . Li Yun-Jing, Chang Shih-Pang, Cheng Yuh-Jen, Conference on Lasers and Electro-Optics . 2015

机译：多面ingAn / GaN多量子阱发光器件的生长和电致发光性能
5. InGaN/GaN Multiple Quantum Well Light-Emitting Diodes grown on Polar, Semi-polar and Non-Polar Orientations. [D] . Mukund, Aadhithya Hosalli. 2014

机译：以极性，半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
6. Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation [O] . Abu Bashar Mohammad Hamidul Islam, Jong-In Shim, Dong-Soo Shin 2018

机译：InGaN / GaN多量子阱发光二极管中的光电性能变化：电位波动的影响
7. Composition Fluctuation of In and Well-Width Fluctuation in InGaN/GaN Multiple Quantum Wells in Light-Emitting Diode Devices [O] . Gil Ho Gu, Dong Hyun Jang, Ki Bum Nam, 2013

机译：在发光二极管器件中InGaN / GaN多量子阱中In和宽度波动的组成波动

Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device

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