Highly Efficient AlGaN/GaN/InGaN Multi-quantum Well Ultraviolet Light-Emitting Diode

摘要

Nitride semiconductors have become the new generation of light sources for displays and optical storage. Nitride emitters are highly efficient, environmentally friendly and have a long device life. In this article, we have designed a new structure for ultraviolet light-emitting diode. The device consists of A1GaN/GaN/InGaN multi-quantum well structure. In this design, the quantum structure was engineered to increase the confinements of carriers in the quantum well. The more carrier' s confinement increases radiative recombination rate in the active region of the device and enhances the device performance. The proposed design and its performance are simulated and studied by numerical approach. Comparing to reported design, significant improvement in the intensity of output light and reduced electrical power consumption has been observed and the structure shows better performance at wavelength of 350-380 nm.