Atomic diffusion near A1 grain boundary (Molecular dynamics analysis based on effective-medium theory)

摘要

Atomic diffusion near an aluminum grain boundary is analyzed in order to investi- gate the basic mechanism of stress-induced migration(SM) in a thin wiring line in LSI. molecular dynamics based on effective-medium theory(EMT) is applied to a model consisting of a surface and ∑=5[001] symmetrical tilt grain boundary with a bamboo- like structure.