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A CNTFET universal mixed-mode biquad active filter in subthreshold region

机译:亚阈值区域的CNTFET通用混合模式双二阶有源滤波器

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This paper presents a new low-voltage and low-power mixed-mode universalactive filter, using only 12 carbon nanotube field effect transistors (CNTFETs) and2 grounded capacitors to improve the noise performance of the proposed circuit.Due to the use of subthreshold transistors biased at ±0.2 V supply voltage, thepower consumption of the proposed multi input-single output (MISO) filter is only850 nW at 19 MHz center frequency. On the other hand, relaxing from any matchingcomponents, the center frequency and quality factor of the proposed filter canbe tuned electronically with low sensitivity to the values of the active and passiveelements. Furthermore, the active chip area of the proposed filter is significantlyreduced to 0.047 μm~2, in 32 nm CNTFET technology. Therefore, as the HSPICEsimulation results show, the input referred noise values at 19 MHz are reduced to15.5 nV/HZ~(1/2)and 185 fA/HZ~(1/2)in voltage and current modes, respectively. It isalso shown that, by changing the number of nanotubes in the CNTFET structure, avery good power-frequency trade-off can be achieved for low-power GHzapplications.
机译:本文提出了一种新型的低压低功耗混合模式通用有源滤波器,仅使用12个碳纳米管场效应晶体管(CNTFET)和接地电容来改善所提出电路的噪声性能。 r n由于使用了在±0.2 V电源电压下偏置的亚阈值晶体管,因此建议的多输入单输出(MISO)滤波器的功耗在中心频率19 MHz时仅为 n850 nW。另一方面,从任何匹配的分量中放松,所提出的滤波器的中心频率和品质因数可以通过电子方式对有源和无源元件的值低灵敏度地进行调谐。此外,在32 nm CNTFET技术中,所提出的滤波器的有源芯片面积显着减小至0.047μm〜2。因此,如HSPICE r n仿真结果所示,在19 MHz时,输入参考噪声值降低为 r n15.5 nV / HZ〜(1/2)和185 fA / HZ〜(1/2)电压和电流模式。还表明,通过改变CNTFET结构中的纳米管数量,对于低功率GHz应用而言,可以实现非常好的功率-频率折衷。

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