Electrical models of through silicon Vias and silicon-based devices for millimeter-wave application

摘要

As the short vertical interconnections can significantly shorten the interconnectlength between different circuits, three-dimensional integrated circuits (3D ICs)based on the through-silicon via (TSV) technology are considered as one of themost promising alternatives to overcome the scaling limits of Moore's low. Moreover,as the silicon technologies have been progressively expanded into themillimeter-wave (mmW) realm, the TSV technology also provides a promisingoption to realize a compact system with high performance and operating frequencies.This article provides an overview of recent advances in the development ofTSV technologies and silicon-based passive devices for mmW applications. Asvarious kinds of TSV losses are detrimental to the electrical performance of 3DICs, especially in mmW systems, TSVs exploiting novel structures and materialsstill needs much more research, making it possible to integrate the passive deviceon 3D ICs and providing a promising option to realize a compact mmW systemwith excellent electrical performance and system reliability.