Wave approach for noise modeling of gallium nitride high electron-mobility transistors

摘要

The wave approach has appeared as a very efficient tool for modeling as well as for measurements of noise parameters of microwave transistors. Having in mind the attractiveness of transistors in gallium nitride technology in modern communication systems, where it is very important to keep the noise on a low level and, thus, to have accurate transistor noise models, in this paper, the wave approach is applied for the noise modeling of high electron-mobility transistor in gallium nitride technology. The noise wave representation of the transistor intrinsic circuit noise is used, where the noise wave parameters are modeled by exploiting the artificial neural networks. The modeling results, compared with the measured data and with those obtained by the conventional noise equivalent circuit model, provide a verification of the developed model accuracy. Copyright (c) 2015 John Wiley & Sons, Ltd.