Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

摘要

In this paper, a systematic theoretical study on the fin-shaped AlGaN/GaN HEMTs with trigate structure and dual-gate structure is performed by TCAD simulation. The influence of different gate structures and fin width on the DC performance of the fin-shaped AlGaN/GaN high electron mobility transistors (HEMTs) are mainly studied and compared. A simplified physical analysis of the influence of fin width and gate structure on the threshold voltage is made.