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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Design and demonstration of acoustically optimized, fully-printed, BST MIM varactors for high power matching circuits
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Design and demonstration of acoustically optimized, fully-printed, BST MIM varactors for high power matching circuits

机译:经过声学优化的全印刷BST MIM变容二极管的设计和演示,用于大功率匹配电路

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摘要

This work addresses the piezoelectric induced reduction of quality factor in fully-printed metal-insulator-metal (MIM) barium strontium titanate (BST) thick film varactors designed for high power operation. An acoustically optimized varactor design is presented and compared to a non-optimized high-power varactor. The design is utilized to present a narrowband acoustic suppression technique based on defined weights. The acoustically optimized varactor consists of 162 varactor cells in a capacitive matrix. The cells in the matrix are interconnect-able allowing for a variable unbiased capacitance and power rating. Due to this setup, surface acoustic waves are interrupted, and the reduced size of the cells allows for a reduced BST layer thickness, shifting the acoustic resonance away from the operational frequency. Therefore, an inverted behavior in comparison to the high-power varactor is observed with an increasing quality factor with biasing voltage. Compared to the high-power varactor, the acoustically optimized varactor design shows a 40% increased quality factor in biased state. By applying the narrowband acoustic suppression technique, an increase in quality factor of 145% is achieved compared to the unsuppressed design. In comparison to the high-power varactor, the acoustical suppressed design shows an increase in quality factor of 480% at the first acoustic resonance frequency.
机译:这项工作解决了为高功率工作而设计的全印刷金属-绝缘体-金属(MIM)钛酸锶锶(BST)厚膜变容二极管的压电诱导品质因数降低。提出了一种声学优化的变容二极管设计,并将其与非优化的高功率变容二极管进行了比较。该设计用于基于定义的权重来呈现窄带声抑制技术。经过声学优化的变容二极管由电容矩阵中的162个变容二极管单元组成。矩阵中的单元是可互连的,从而允许可变的无偏置电容和额定功率。由于这种设置,表面声波被打断,单元尺寸的减小使BST层的厚度减小,从而使声共振偏离了工作频率。因此,观察到与大功率变容二极管相比行为相反,且品质因数随偏置电压增加而增加。与高功率变容二极管相比,经过声学优化的变容二极管设计在偏置状态下的品质因数提高了40%。与未抑制的设计相比,通过应用窄带声抑制技术,可以将品质因数提高145%。与高功率变容二极管相比,在第一声共振频率处,声学抑制设计显示出品质因数提高了480%。

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