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机译:采用绝缘体上硅(SOI)CMOS技术实现的MOSFET和基本电路的高温特性高达450℃
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Fraunhofer Institute for Microelectronic Circuits and Systems, IMS, Finkenstrasse 61, 47057 Duisburg, Germany;
Band gap reference; CMOS; high temperature; ring oscillator; silicon-on-insulator (SOI);
机译:超低温-CMOS混合电路在低温下工作的MOSFET的特性和建模
机译:多阈值深亚微米SOI CMOS技术中低失真MOSFET-C模拟结构的表征和设计方法
机译:低温下28 nm FDSOI CMOS技术的表征和建模
机译:高温特性高达450°C的MOSFET和在绝缘体上实现的基本电路(SOI)CMOS技术
机译:单晶薄膜绝缘体上硅(TFSOI)CMOS集成电路的物理和技术发展
机译:具有CMOS放大器芯片的温度补偿单晶绝缘硅(SOI)MEMS振荡器
机译:采用反向体偏置(RBB)的高达400°C高温的pD-sOI CmOs技术的模拟电路设计
机译:采用Bulk和sOI CmOs技术的mOsFET RF特性