Photoelectrochemical characterization of SiC

摘要

The current-voltage (I-V) studies for p-SiC in KOH and n-SiC in Na_2SO_3 in a two-electrode configuration indicated that SiC-based photoelectrochemical systems can be a possibility for water splitting. With illumination there is appreciable photocurrent generation at the semiconductor-electrolyte interface, which correspond to water splitting to form hydrogen and oxygen at the respective electrodes. The C-V analysis gave an idea about the flat-band potential and carrier concentration.