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Effects of fin geometry on boiling heat transfer from silicon chips with micro-pin-fins immersed in FC-72

机译:鳍片几何形状对微针鳍片浸入FC-72的硅芯片沸腾传热的影响

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Experiments were performed to study the effects of the height and thickness of square micro-pin-fin on boiling heat transfer from silicon chips immersed in a pool of degassed or gas-dissolved FC-72. Six kinds of micro-pin-fins with the dimensions of 30 x 60, 30 x 120, 30 x 200, 50 x 60, 50 x 200 and 50 x 270 μm~2 (thickness, t x height, h) were fabricated on the surface of a square silicon chip with the dimensions of 10 x 10 x 0.5 mm~3 by using the dry etching technique. The fin pitch was twice the fin thickness. The experiments were conducted at the liquid subcooling, ΔT_(sub), of 0, 3, 25 and 45 K under the atmospheric condition. The results were compared with previous results for a smooth chip and three chips with enhanced heat transfer surfaces. The micro-pin-finned chips showed a considerable heat transfer enhancement in the nucleate boiling region and increase in the critical heat flux, q_(CHF), as compared to the smooth chip. The wall temperature at the CHF point was always less than the maximum allowable temperature for LSI chips (= 85℃). For a fixed value of t, q_(CHF) increased monotonically with increasing h. The increase was more significant for larger t. The q_(CHF) increased almost linearly with increasing Δ_T(sub). The maximum value of allowable heat flux (= 84.5 W/cm~2), 4.2 times as large as that for the smooth chip, was obtained by the chip with h = 270 μm and t = 50 μm at ΔT_(sub) = 45 K.
机译:进行实验以研究方形微针鳍的高度和厚度对浸入脱气或气体溶解的FC-72池中的硅片的沸腾传热的影响。在其上制作了六种尺寸为30 x 60、30 x 120、30 x 200、50 x 60、50 x 200和50 x 270μm〜2(厚度,tx高度,h)的微针鳍。采用干法刻蚀技术在方形硅芯片表面形成尺寸为10 x 10 x 0.5 mm〜3的表面。鳍间距是鳍厚度的两倍。实验是在大气条件下以液体过冷ΔT_(sub)分别为0、3、25和45 K进行的。将结果与以前的结果进行比较,得出光滑的切屑和三个传热表面增强的切屑。与光滑芯片相比,微针翅片芯片在成核沸腾区域显示出显着的传热增强,并且临界热通量q_(CHF)增大。 CHF点处的壁温始终低于LSI芯片的最高允许温度(= 85℃)。对于固定的t,q_(CHF)随着h的增加而单调增加。对于较大的t,增加更为显着。 q_(CHF)几乎随着Δ_T(sub)的增加而线性增加。在ΔT_(sub)= 45时,h = 270μm,t = 50μm的芯片获得的允许热通量最大值(= 84.5 W / cm〜2)是光滑芯片的4.2倍。 K.

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