Numerical simulation of the Czochralski growth process of oxide crystals with a relatively thin optical thickness

摘要

For the single crystal growth of an oxide, the global analysis of heat transfer in the inductively heated Czochralski (CZ) furnace was carried out to investigate the effect of optical properties of crystal on the CZ crystal growth process. Here, the finite volume method (FVM) was used as the radiative transfer model to solve the radiative transfer equation, and consequently the crystal with a relatively thin optical thickness (～0.01) could be accounted for. As a result, it was found that the melt/crystal interface becomes more convex toward the melt for a small crystal rotational Reynolds number as the optical thickness of the crystal, K{sub}s decreases, although its dependence is slight for K{sub}s < 0.1. In addition, the critical Reynolds number, at which the interface inversion occurs, decreases with the optical thickness of the crystal.